Metal working – Barrier layer or semiconductor device making
Patent
1999-10-06
2000-07-18
Niebling, John F.
Metal working
Barrier layer or semiconductor device making
118723R, 118723AN, 118723MW, 118723I, C23C 1600
Patent
active
060901675
ABSTRACT:
A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.
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Bhan Mohan Krishan
Gupta Anand
Rana Viren V. S.
Subrahmanyam Sudhakar
Applied Materials Inc.
Ghyka Alexander G.
Niebling John F.
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