Method and apparatus for improving etch uniformity in remote sou

Details Method and apparatus for improving etch uniformity in remote sou Method and apparatus for improving etch uniformity in remote sou

1993-04-16

1997-09-02

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 68, 216 69, 216 71, 438719, H01L 21302

Patent

active

056627700

ABSTRACT:
This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity problem which arises as the result of nonuniform power coupling between the wafer and the walls of the etch chamber. The solution to greatly mitigate the nonuniformity problem is to increase the impedance between the wafer and the chamber walls. This may be accomplished by placing a cylindrical dielectric wall around the wafer. Quartz is a dielectric material that is ideal for the cylindrical wall if silicon is to be etched selectively with respect to silicon dioxide, as quartz it is virtually inert under such conditions.

REFERENCES:
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4793975 (1988-12-01), Drage
patent: 5087341 (1992-02-01), Tsukada et al.
patent: 5320982 (1994-06-01), Tsubone et al.

Affiliated with

Also associated with

Rating

Method and apparatus for improving etch uniformity in remote sou does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for improving etch uniformity in remote sou, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for improving etch uniformity in remote sou will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-305097