Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S184000, C257S290000, C372S045013
Reexamination Certificate
active
07084444
ABSTRACT:
A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG.4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.
REFERENCES:
patent: 5818860 (1998-10-01), Garbuzov et al.
patent: 5987047 (1999-11-01), Valster et al.
patent: 0 540 799 (1993-05-01), None
patent: 0 575 684 (1993-12-01), None
patent: 0 690 536 (1996-01-01), None
patent: 0 851 547 (1998-07-01), None
patent: 0 959 540 (1999-11-01), None
patent: 09045989 (1997-02-01), None
Supplemental Search Report from EP 01930425.2, mailed Oct. 26, 2005.
Garbuzoy et al., “Broadened Waveguide, Low Loss 1.5 μm InGaAsP/InP and 2 μm InGaAsSb/AlGaAsSb Laser Diodes” 1997 Int. Conference on Indium Phosphide and Related Materials, Hyannis, Cape Cod, May 11-15, 1997, Indium Phosphide and Related Materials, New York, NY: IEEE, US, May 11, 1997, pp. 551-554.
Garbuzov Dmitri Zalmanovich
Menna Raymond J.
Abraham Fetsum
Trumpf Photonics Inc.
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