Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-07
2011-06-07
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S618000, C438S622000, C257S758000, C257S773000, C257S786000, C257SE23020
Reexamination Certificate
active
07955973
ABSTRACT:
A method of securing a bond pad in to a semiconductor chip having an upper top metal surface which includes one or more holes, the method comprising the steps of forming a passivation layer over the upper metal surface, which passivation layer has holes therein substantially corresponding to the or each hole in the upper metal layer and being substantially the same size or smaller than the holes in the upper metal layer; forming the bond pad over the passivation layer; characterised in that the step of forming the bond pad comprises introducing some of the material from the bond pad into the holes in the passivation layer and upper metal layer when forming the bond pad, securing the bond pad to the passivation layer by allowing said material to flow under the surface thereof and attach thereto without attaching to the upper metal layer to thereby form a securing means.
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Freescale Semiconductor Inc.
Parekh Nitin
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