Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-12-11
2007-12-11
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189060, C365S189110, C365S185180
Reexamination Certificate
active
11291498
ABSTRACT:
A high-voltage charge pump circuit includes a charge pump circuit. A first high-voltage output circuit is configured to set an output voltage of the charge pump at a first voltage level selected for regular programming and erasing memory cells. A second high-voltage output circuit is configured to set the output voltage of the charge pump at a second voltage level selected for walkout of device junctions, the second voltage level being higher than the first voltage level. A third high-voltage output circuit is configured to set the output voltage of the charge pump at a third voltage level selected for guardband programming and erasing, the third voltage level being lower than the second voltage level and higher than the first voltage level. Selection circuitry selectively couples one of the first, second, and third high-voltage output circuits to the output of the high-voltage charge pump circuit.
REFERENCES:
patent: 4888738 (1989-12-01), Wong et al.
patent: 4928159 (1990-05-01), Mihara et al.
patent: 5486486 (1996-01-01), Ghezzi et al.
patent: 2004/0233718 (2004-11-01), Yaoi et al.
Chan Johnny
Ng Philip S.
Son Jinshu
Atmel Corporation
Pham Ly Duy
Sierra Patent Group Ltd.
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