Method and apparatus for implementing self-referencing read...

Details Method and apparatus for implementing self-referencing read... Method and apparatus for implementing self-referencing read...

2008-04-30

2010-02-09

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S113000

Reexamination Certificate

active

07660152

ABSTRACT:
A method of implementing a self-referencing read operation for a PCRAM array includes applying a stimulus to a bit line associated with a selected phase change element (PCE) to be read; comparing a first voltage on a node of the bit line with a second voltage on a delay node, wherein the second voltage represents a delayed voltage with respect to the first voltage due to a resistance/capacitance time constant associated therewith; and determining whether, during the read operation, the first voltage drops below the value of the second voltage; wherein in the event the first voltage drops below the value of the second voltage during the read operation, the PCE is determined to be programmed to an amorphous state and in the event the first voltage does not drop below the value of the second voltage, the PCE is determined to be programmed to a crystalline state.

REFERENCES:
patent: 6590807 (2003-07-01), Lowrey
patent: 7042760 (2006-05-01), Hwang et al.
patent: 2005/0047193 (2005-03-01), Bedeschi et al.
patent: 2006/0146600 (2006-07-01), Johnson
patent: 2006/0164898 (2006-07-01), Pio
patent: 2006/0227592 (2006-10-01), Parkinson et al.
patent: 2006/0233019 (2006-10-01), Kostylev et al.

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