Method and apparatus for implantation of doubly-charged ions

Details Method and apparatus for implantation of doubly-charged ions Method and apparatus for implantation of doubly-charged ions

1983-09-16

1985-12-24

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250281, 250423R, G21K 500

Patent

active

045608792

ABSTRACT:
An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.

REFERENCES:
patent: 3579270 (1971-05-01), Daly
patent: 4205232 (1980-05-01), Maixner et al.
patent: 4263097 (1981-04-01), Ohkawa
patent: 4283631 (1981-08-01), Turner
patent: 4383180 (1983-05-01), Turner
C. P. Wu et al., "Electron-Flood Techniques to Neutralize Beam Charging During Ion Implantation," RCA Review, vol. 44, Mar. 1983.

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