Optics: measuring and testing – By configuration comparison – With two images of single article compared
Patent
1996-09-05
1998-05-19
Font, Frank G.
Optics: measuring and testing
By configuration comparison
With two images of single article compared
356414, 356343, G01N 2100
Patent
active
057542988
ABSTRACT:
A radiant energy point source (10) generates radiant energy, and a mechanism (12, 15, 16) focuses the radiant energy generated by the point source onto a target (18) and scans the target with the focused radiant energy. A collector (16, 14) collects the focused radiant energy that is scattered from the target and a splitter (22) splits the collected radiant energy into two paths. Each of the two paths of the collected radiant energy is focused onto separate focal spots by a focusing mechanism (24). A pair of spatial filters (26, 28) filter the collected radiant energy at the focal spots. The spatial filters are offset from each other along the path of the focused radiant energy. Detectors (30, 32) separately detect the focused radiant energy which passes through each of the spatial filters and produce signals proportional to the quantity of detected focused radiant energy present. Finally, the produced signals are combined into an image signal related to the distance traveled by the radiant energy from the focusing mechanism to the target and back to the collector.
REFERENCES:
patent: 4758092 (1988-07-01), Heinrich et al.
patent: 5028135 (1991-07-01), Cheung et al.
patent: 5280272 (1994-01-01), Nagashima et al.
patent: 5540494 (1996-07-01), Purvis, Jr. et al.
Brunfeld, A. et al., "High Resolution Optical Profilometer," SPIE, 680:118-123, 1986.
Heinrich, H.K. et al., "Noninvasive Sheet Charge Density Probe for Integrated Silicon Devices," Appl. Phys. Lett., 48(16):1066-1068, Apr. 1986.
Corle, T.R. et al., "Distance Measurements by Differential Confocal Optical Ranging," Applied Optics, 26(12):2416-2420, Jun. 15, 1987.
Falk, R.A. et al., "Optical Probe Techniques for Avalanching Photoconductors," 8th IEEE Pulsed Power Conference, 29-32, 1991.
Schoenbach, K.H. et al., "Temporal Development of Electric Field Structures in Photoconductive GaAs Switches," Appl. Phys. Lett., 63(15):2100-2102, 1993.
Chen, T. et al., "Measurement Principle and Error Analysis for an Optical Heterodyne Profilometer," SPIE, 2101:800-803, 1993.
Goldstein, M. et al., "Hetrodyn Interferometer for the Detection of Electric and Thermal Signals in Integrated Circuits Through the Substrate," Rev. Sci. Instrum., 64(10):3009-3013, 1993.
Falk, R.A., et al., "Dynamic Optical Probing of High-Power Photoconductors," 9th IEEE Pulsed Power Conference, pp. 88-91, 1993.
Falk, R.A. et al., "Electro-Optic Imagery of High-Voltage GaAs Photoconductive Switches," IEEE Transactions on Electron Devices, 42(1):43-49, 1995.
Adams, J.C., "Electro-Optic Imaging of Internal Fields in (111) GaAs Photoconductors," IEEE Transactions on Electron Devices, 42(6):1081-1085, 1995.
Font Frank G.
Optometrix Inc.
Ratliff Reginald A.
LandOfFree
Method and apparatus for imaging semiconductor device properties does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for imaging semiconductor device properties, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for imaging semiconductor device properties will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1857921