Method and apparatus for identifying the chemical...

Optics: measuring and testing – For light transmission or absorption – Of fluent material

Reexamination Certificate

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C356S432000

Reexamination Certificate

active

07940395

ABSTRACT:
Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.

REFERENCES:
patent: 7052943 (2006-05-01), Yamazaki et al.
patent: 2003/0129117 (2003-07-01), Mills
International Search Report and Written Opinion of PCT Application No. PCT/US08/72008, date of mailing Oct. 14, 2008, 10 pages total.

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