Method and apparatus for growing silicon crystals

Details Method and apparatus for growing silicon crystals Method and apparatus for growing silicon crystals

1989-02-22

1991-01-01

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 156DIG73, 156DIG64, 422249, 148DIG3, 148DIG71, C30B 1514, C30B 2906, C30B 3300, C30B 3500

Patent

active

049815490

ABSTRACT:
A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.

REFERENCES:
patent: 4661166 (1987-04-01), Hirao
Japanese Patent Application JA0163190, Jul. 86.

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