Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2009-02-13
2011-11-22
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S200000, C117S202000, C117S068000, C117S105000
Reexamination Certificate
active
08062422
ABSTRACT:
Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
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Chang Mei
Chen Ling
Chung Hua
Ganguli Seshadri
Ku Vincent W.
Applied Materials Inc.
Kunemund Bob M
Patterson & Sheridan L.L.P.
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