Method and apparatus for forming substrate for semiconductor...

Details Method and apparatus for forming substrate for semiconductor... Method and apparatus for forming substrate for semiconductor...

2006-10-31

2006-10-31

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

By polarized light examination

Of surface reflection

Reexamination Certificate

active

07130048

ABSTRACT:
In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e.g., melting) to end of the change (e.g., solidification) can be obtained with a high time resolution of pico-seconds. Based on this, it is possible to know a progress of a change in state of the thin film (e.g., crystallization) or a transition of growth of crystal grains in units of pico-seconds.

REFERENCES:
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patent: 4431914 (1984-02-01), Mourou et al.
patent: 4891581 (1990-01-01), Takiguchi
patent: 6782337 (2004-08-01), Wack et al.
Mutsuko Hatano, et al., “Excimer laser-induced temperature field in melting and resolidification of silicon thin films”, Journal of Applied Physics, vol. 87, No. 1, Jan. 1, 2000, pp. 36-43.

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