Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-01-31
2006-01-31
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S687000, C438S695000
Reexamination Certificate
active
06992012
ABSTRACT:
Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein.
REFERENCES:
patent: 3410774 (1968-11-01), Barson et al.
patent: 4358338 (1982-11-01), Downey et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4681653 (1987-07-01), Purdes et al.
patent: 4732761 (1988-03-01), Machida et al.
patent: 4756801 (1988-07-01), Jokinen et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4767496 (1988-08-01), Hieber
patent: 4793895 (1988-12-01), Kaanta et al.
patent: 4810335 (1989-03-01), Hieber
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4824546 (1989-04-01), Ohmi
patent: 4865712 (1989-09-01), Mintz
patent: 4874493 (1989-10-01), Pan
patent: 4874494 (1989-10-01), Ohmi
patent: 4891112 (1990-01-01), Wong
patent: 4915806 (1990-04-01), Lardon et al.
patent: 4962060 (1990-10-01), Sliwa et al.
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4968374 (1990-11-01), Tsukada et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5069770 (1991-12-01), Glocker
patent: 5078847 (1992-01-01), Grosman et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5126028 (1992-06-01), Hurwitt et al.
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5221640 (1993-06-01), Sato
patent: 5262354 (1993-11-01), Cote et al.
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5303139 (1994-04-01), Mark
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5346600 (1994-09-01), Nieh et al.
patent: 5350479 (1994-09-01), Collins et al.
patent: 5354712 (1994-10-01), Ho et al.
patent: 5371042 (1994-12-01), Ong
patent: 5376584 (1994-12-01), Agarwala
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5512150 (1996-04-01), Bourez et al.
patent: 5516399 (1996-05-01), Balconi-Lamica et al.
patent: 5534460 (1996-07-01), Tseng et al.
patent: 5584974 (1996-12-01), Sellers
patent: 5585673 (1996-12-01), Joshi et al.
patent: 5585974 (1996-12-01), Shrinkle
patent: 5589041 (1996-12-01), Lantsman
patent: 5591269 (1997-01-01), Arami et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5613296 (1997-03-01), Kurino et al.
patent: 5639357 (1997-06-01), Xu
patent: 5651865 (1997-07-01), Sellers
patent: 5654232 (1997-08-01), Gardner
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5685959 (1997-11-01), Bourez et al.
patent: 5685961 (1997-11-01), Pourrezaei et al.
patent: 5693563 (1997-12-01), Teong
patent: 5718813 (1998-02-01), Drummond et al.
patent: 5725739 (1998-03-01), Hu
patent: 5731245 (1998-03-01), Joshi et al.
patent: 5744376 (1998-04-01), Chan et al.
patent: 5759906 (1998-06-01), Lou
patent: 5770023 (1998-06-01), Sellers
patent: 5780357 (1998-07-01), Xu et al.
patent: 5807467 (1998-09-01), Givens et al.
patent: 5810963 (1998-09-01), Tomioka
patent: 5810982 (1998-09-01), Sellers
patent: 5846332 (1998-12-01), Zhao et al.
patent: 5858184 (1999-01-01), Fu et al.
patent: 5865961 (1999-02-01), Yokoyama et al.
patent: 5897752 (1999-04-01), Hong et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5966634 (1999-10-01), Inohara et al.
patent: 5968327 (1999-10-01), Kobayashi et al.
patent: 5976327 (1999-11-01), Tanaka
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6001420 (1999-12-01), Mosely et al.
patent: 6042700 (2000-03-01), Gopalraja et al.
patent: 6051114 (2000-04-01), Yao et al.
patent: 6080284 (2000-06-01), Miyaura
patent: 6106625 (2000-08-01), Koai et al.
patent: 6110821 (2000-08-01), Kohara et al.
patent: 6136693 (2000-10-01), Chan et al.
patent: 6291885 (2001-09-01), Cabral, Jr. et al.
patent: 6375810 (2002-04-01), Hong
patent: 2002/0060363 (2002-05-01), Xi et al.
patent: 0 123 456 (1984-10-01), None
patent: 0 297 502 (1989-01-01), None
patent: 0 202 572 (1993-12-01), None
patent: 0 735 577 (1996-10-01), None
patent: 0 798 778 (1997-10-01), None
patent: 0 892 428 (1999-01-01), None
patent: 0 788 160 (1999-06-01), None
patent: 61261472 (1986-11-01), None
patent: 02134164 (1990-05-01), None
patent: 4030421 (1992-02-01), None
patent: 8213119 (1996-08-01), None
US 5,863,392, 01/1999, Drummond et al. (withdrawn)
Fusen Chen et al., U.S. Appl. No. 08/856,116, filed May 14, 1997, entitled “Reliability Barrier Integration for CU Application”.
“Endpoint Detection Method for Ion Etching of Material Having a Titanium Nitride Underlayer”, Research Disclosure, Feb. 1991, No. 322, (C) Kenneth Mason Publications Ltd, England.
Novellus Damascus Home Page, “12 Steps of Damascus”.
H. Koenig et al., “RF Sputtering System with Variable Substrate Bias”, Jul. 1970, IBM Technical Disclosure Bulletin, vol. 13, No. 2, pp. 323-324.
L.J. Kochel, “Pressure Control of RF Bias for Sputtering”, Dec. 1976, Rev. Sci. Instrum., vol. 47, No. 12, pp. 1556-1557.
K. Suzuki et al., “Microwave Plasma Etching”, Nov., 1997, Japanese Journal of Applied Physics, vol. 16, No. 11, pp. 1979-1984.
H. Kotani et al., “Sputter-Etching Planarization for Multilevel Metallization”, Mar. 1983, J. Electrochem. Soc., vol. 130, No. 3, pp. 645-648.
K. Suzuki, “Microwave Plasma Etching”, 1984, Central Research Laboratory, Hitachi Ltd., pp. 953-957.
S. Matsuo, “Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Electron cyclotron Resonance Plasmas”, 1985, Aisugi Electrical Communication Laboratory, pp. 75-117.
Homma et al., Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias, Jun., 1985, J.Electrochem.Soc., Solid State Sci. & Tech., vol. 132, pp. 1466-1471.
“SypherLine by MTi”, Nov. 1985, Semiconductor International.
H.P. Bader et al., “Planarization by Radio-Frequency Bias Sputtering of Aluminum as Studied Experimentally and by Computer Simulation”, Nov./Dec. 1985, J. Vac.Sci.Technol.A3(6), pp. 2167-2171.
Technical Staff, MTI Thin Film Equipment Division, “Planarizing Enhancement Mode “Sputtering . . . Plus”(TM) for Planarized Aluminum in Sypherline(TM)”, Apr., 1986, Applications Note, vol. 1, No. 1.
D.W. Skelly et al., “Significant Improvement in Step Coverage Using Bias Sputtered Aluminum”, May/Jun., 1986, J.Vac.Sci.Technol. A4(3), pp. 457-460.
M. Yamashita, “Fundamental Characteristics of Built-In-High-Frequency Coil-Type Sputtering Apparatus”, Mar./Apr. 1989, J.Vac.Sci.Technol.A, vol. 7, No. 2, pp. 151-158.
M. Matsuoka et al., “Dense Plasma Production and Film Deposition by New High-Rate Sputtering Using an Electric Mirror”, Jul./Aug. 1989, J.Vac.Sci.Technol A7(4), pp, 2651-2657.
P. Kidd, “A Magnetically Confined and Electron Cyclotron Resonance Heated Plasma Machine for Coating and Ion Surface Modification Use”, May/Jun. 1991, J.Vac.Sci.Technol.A., pp. 466-473.
J. Musil, “Unbalanced Magnetrons and New Sputtering Systems with Enhanced Plasma Ionization”, May/Jun. 1991, J.Vac.Sci.Technol.A9(3), pp. 1171-1177.
I. Ivanov, et al., “Electron Energy Distribution Function in a DC Magnetron Sputtering Discharge”,
Chiang Tony
Chin Barry
Hashim Imran
Applied Materials Inc.
Dugan & Dugan
Lee Calvin
Nelms David
LandOfFree
Method and apparatus for forming improved metal interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for forming improved metal interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for forming improved metal interconnects will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3540546