Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2003-08-13
2009-11-10
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S044000, C438S222000, C438S226000, C438S413000, C438S442000, C257SE21090, C257SE21461
Reexamination Certificate
active
07615390
ABSTRACT:
The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus (10) comprising a chamber (12) having a gas input port (14) and a gas output port (16), and means (18) for mounting a silicon substrate within the chamber (12), said apparatus further including a gas source connected to the input port and arranged to provide nitrogen or a noble gas as a carrier gas.
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Caymax Mathieu Rosa Jozef
Meunier-Beillard Philippe
Estrada Michelle
NXP B.V.
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