Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-17
2006-01-17
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000
Reexamination Certificate
active
06987035
ABSTRACT:
A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
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Mitsuru Nakata, et al., “A New Nucleation-Site-Control Excimer-Laser-Crystallization Method”, Jpn. J. Appl. Phys., vol., 40 (2001), Part 1, No. 5A, May 2001, pp. 3049-3054.
Chang-Ho Oh, et al., “Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing”, Jpn. J. Appl. Phys., vol., 37, (1998), Part 1, No. 10, Oct. 1998, pp. 5474-5479.
Hiramatsu Masato
Jyumonji Masayuki
Kimura Yoshinobu
Nishitani Mikihiko
Yamamoto Yoshitaka
Advanced LCD Technologies Development Center Co. Ltd.
Chaudhari Chandra
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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