Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-10-11
2005-10-11
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S151000, C438S298000, C438S517000
Reexamination Certificate
active
06953738
ABSTRACT:
A method for forming a silicon-on-insulator transistor (80) includes forming an active region (82) overlying an insulating layer (122), wherein a portion of the active region provides an intrinsic body region (126). A body tie access region (128) is also formed within the active region, overlying the insulating layer and laterally disposed adjacent the intrinsic body region, making electrical contact to the intrinsic body region. A gate electrode (134) is formed overlying the intrinsic body region for providing electrical control of the intrinsic body region, the gate electrode extending over a portion (137) of the body tie access region. The gate electrode is formed having a substantially constant gate length (88) along its entire width overlying the intrinsic body region and the body tie access region to minimize parasitic capacitance and gate electrode leakage. First and second current electrodes (98,100) are formed adjacent opposite sides of the intrinsic body region. In addition, a body tie diffusion (130) is formed within the active region and laterally offset from the body tie access region and electrically coupled to the body tie access region.
REFERENCES:
patent: 6620656 (2003-09-01), Min et al.
Matloubian, “Smart Body Contact for SOI MOSFETs,”IEEE SOI Conference, 1989, pp. 128-129.
Du Yang
Veeraraghavan Surya
Workman Glenn O.
Balconi-Lami Michael J.
Freescale Semiconductor Inc.
King Robert L.
Vu Hung
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