Method and apparatus for forming a magnetically oriented thin fi

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419213, 20429816, C23C 1434

Patent

active

058040412

ABSTRACT:
A method for forming a magnetically oriented thin film on a substrate is disclosed wherein deposition pulses are alternated with magnetic field pulses. In particular, the method includes sputtering a target to deposit a first incremental layer of target material on the substrate, wherein the target is sputtered for a first sputtering time period and the first incremental layer includes randomly oriented first domains. The method further includes generating a magnetic field for orienting the first in a desired direction, wherein the magnetic field is generated for a first magnetic field time period which begins after the first sputtering time period ends. In addition, the method includes sputtering the target to deposit a second incremental layer of target material upon the first incremental layer; wherein the target is sputtered for a second sputtering time period which begins after the first magnetic field time period ends and the second incremental layer includes randomly oriented second domains. The magnetic field is then generated which orients the second domains in the desired direction, the magnetic field being generated for a second magnetic field time period which begins after the second sputtering time period ends. The steps of sputtering the target and generating the magnetic field are then repeated to form successive incremental layers each having associated domains which are oriented in the desired direction by the magnetic field to form a thin film on the substrate whose domains are oriented in the desired direction.

REFERENCES:
patent: 4911815 (1990-03-01), Kamei et al.
patent: 5242761 (1993-09-01), Uchiyama
patent: 5290416 (1994-03-01), Tong et al.
patent: 5589039 (1996-12-01), Hsu
patent: 5630916 (1997-05-01), Gerrish et al.

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