Method and apparatus for forming a film by sputtering process

Details Method and apparatus for forming a film by sputtering process Method and apparatus for forming a film by sputtering process

1994-02-24

1995-09-12

McFarlane, Anthony

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429806, 20429809, 20429811, 118724, 118728, C23C 1446

Patent

active

054494443

ABSTRACT:
A film-forming method for forming a deposited film on a prescribed substrate by sputtering a target for film formation with plasma generated using a sputtering gas in a film-forming chamber, characterized by comprising: arranging a deposition preventive member in said film-forming chamber such that said deposition preventive member circumscribes a plasma region wherein said plasma is generated; subjecting said deposition preventive member to heat treatment prior to commencing film formation; and performing the film formation while applying a predetermined bias voltage to said deposition preventive member and cooling said deposition preventive member to form a deposited film on said substrate maintained at a desired temperature. An apparatus which is suitable for practicing said film-forming method.

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patent: 5382339 (1995-01-01), Aranovich

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