Method and apparatus for forming a barrier metal layer in...

Details Method and apparatus for forming a barrier metal layer in... Method and apparatus for forming a barrier metal layer in...

2007-08-07

2007-08-07

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S685000, C438S649000, C438S653000, C438S592000, C257SE21264, C257SE21576, C257SE21259, C257SE21584

Reexamination Certificate

active

10701341

ABSTRACT:
A method and apparatus for forming a barrier metal layer in semiconductor devices are disclosed. A disclosed method for forming a barrier metal layer in a semiconductor device forms an interlayer insulating layer on a front face of a semiconductor substrate having a contact area and patterns the interlayer insulating layer to open the contact area. The disclosed method further places the semiconductor substrate in a chamber, injects reactant gas and precursor into the chamber, transforms the gas into plasma gas and causes the plasma gas to react with the precursor to form a single TiSiN film covering the contact area.

REFERENCES:
patent: 5770520 (1998-06-01), Zhao et al.
patent: 6271136 (2001-08-01), Shue et al.
patent: 6355902 (2002-03-01), Akahori et al.
patent: 2001/0012667 (2001-08-01), Ma et al.
patent: 2003/0073301 (2003-04-01), Nguyen et al.

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