Method and apparatus for flatband voltage tuning of high-k...

Details Method and apparatus for flatband voltage tuning of high-k... Method and apparatus for flatband voltage tuning of high-k...

2008-06-05

2010-10-26

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S310000, C257S324000, C257S411000, C257SE29164, C257SE29165

Reexamination Certificate

active

07821081

ABSTRACT:
In one embodiment, the invention is a method and apparatus for flatband voltage tuning of high-k field effect transistors. One embodiment of a field effect transistor includes a substrate, a high-k dielectric layer deposited on the substrate, a gate electrode deposited on the high-k dielectric layer, and a dipole layer positioned between the substrate and the gate electrode, for shifting the threshold voltage of the field effect transistor.

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