Method and apparatus for fabricating semiconductor single crysta

Details Method and apparatus for fabricating semiconductor single crysta Method and apparatus for fabricating semiconductor single crysta

1998-04-14

1999-05-04

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117218, 117222, C30B 3500

Patent

active

059000597

ABSTRACT:
This invention provides a method and apparatus for fabricating semiconductor single crystals. By using the method of this invention, the temperature gradient of the single crystal being lifted can be easily controlled. The as-grown defect density can be reduced, and it is possible to manufacture high quality semiconductor single crystals with high oxidation-film breakdown strength. A shield cylinder is used for surrounding the semiconductor single crystal 7 being lifted, the shield cylinder is made to be of the telescopic type and consists of a first shield duct 4, a second shield duct 5, a third shield duct 6. A wire 8 wrapping around a wind-up reel 10 is engaged with the third shield duct 6, and the shield cylinder can be driven to extend or retract by rotating the wind-up reel 10. An ascend and descend rod 3 is connected with the first duct 4, and the shield cylinder can be driven to move upward or downward by lifting or lowering the ascend and descend rod 3. The wind-up reel 10 is driven to retract part of the shield cylinder so that the lapped portion of the shield cylinder keeps a predetermined portion of the semiconductor single crystal 7 being lifted warm, and the temperature gradient of the semiconductor single crystal 7 can be reduced when it passes through the zone whose temperature is within a range from 1000.degree. C. to 1200.degree. C.

REFERENCES:
patent: 4957713 (1990-09-01), Kravetsky et al.
patent: 5196173 (1993-03-01), Aria et al.
patent: 5361721 (1994-11-01), Takano et al.
patent: 5441014 (1995-08-01), Tomioka et al.
patent: 5683505 (1997-11-01), Kunamochi et al.

Affiliated with

Also associated with

Rating

Method and apparatus for fabricating semiconductor single crysta does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for fabricating semiconductor single crysta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for fabricating semiconductor single crysta will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1867683