Method and apparatus for fabricating electronic device

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257209, H01L 2358, H01L 2710

Patent

active

060939338

ABSTRACT:
Logic circuitry formed in street areas between adjacent fabricated electronic devices may be used as auxiliary or redundant components to salvage one or more otherwise defective devices. Logic circuitry is selectively coupled to the defective device(s) to directly replace or facilitate the replacement of defective components on one or more fabricated devices, thereby resulting in a single operable electronic device. The invention may be used to increase the production yield of electronic devices, particularly, semiconductor integrated circuits. The invention permits the fabrication of discretionary wiring during the normal metalization of semiconductor layers to interconnect electronic devices at the same time as the formation of the normal wiring/circuitry of the devices.

REFERENCES:
patent: 3771217 (1973-11-01), Hartman
patent: 3839781 (1974-10-01), Russell
patent: 4859806 (1989-08-01), Smith
patent: 5214657 (1993-05-01), Farnworth et al.
patent: 5324681 (1994-06-01), Lowrey et al.
patent: 5485102 (1996-01-01), Cliff et al.
patent: 5691949 (1997-11-01), Hively et al.
patent: 5748872 (1998-05-01), Norman
patent: 5973340 (1999-10-01), Mohsen

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for fabricating electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for fabricating electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for fabricating electronic device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1338221

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.