Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1995-06-01
1997-05-20
Kunemund, Robert
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
216 60, 216 59, 216 67, 156345, 20419213, 20419218, 20419232, 20419233, 20429803, 20429831, 20429832, 20429834, 20429808, 427100, 29 2535, H01L 213065, C23F 102, C23C 1454
Patent
active
056309490
ABSTRACT:
Resonator fabricating method and apparatus employ the resonance conditions of the piezoelectric resonator itself to control an RF-powered plasma etching or deposition process. In its basic implementation, the apparatus does not require monitoring of the resonant frequency of the resonator as it is being trimmed. Rather, the resonator provides an impedance which changes as the plasma action changes the thickness of the resonator and thereby changes the resonant frequency of the piezoelectric resonator. The changing impedance in turn changes the rate of plasma action until the action substantially stops with the resonant frequency of the resonator substantially equal to the frequency of the RF source.
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Kunemund Robert
McDonald Rodney G.
TFR Technologies, Inc.
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