Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-08-18
1994-10-04
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, H01J 3730
Patent
active
053528999
ABSTRACT:
Methods and apparatus for etching ultra fine lines of impurities on semiconductors and other materials. A cold diverging ion beam is generated, made to converge, encoded using a mask to correspond to an image, and then used to etch impurities on the substrate. An ECR plasma source is used to generate a warm plasma. A cooled neutral target gas is penetrated by the warm plasma ions so that the plasma ion charge is transferred to the cool target gas to provide cool ions, which are then extracted to provide a cryogenic ion beam. The ion beam is made converging and then encoded by the mask. The ion beam also may be transformed into an atom beam in a charge exchange cell.
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Golovanivsky Konstantin S.
Omeljanovsky Erazm M.
Anderson Bruce C.
Ruxam, Inc.
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