Method and apparatus for etching film layers on large substrates

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

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156345, 414436, 414941, 414939, 118503, 118728, H05H 100

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active

057531331

ABSTRACT:
A chamber for processing substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator is disposed on the chamber wall to move the clamping and lifting assembly between the extended and retracted positions.

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