Method and apparatus for etching compound semiconductor

Details Method and apparatus for etching compound semiconductor Method and apparatus for etching compound semiconductor

1993-06-07

1995-03-21

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156635, 156662, B44C 122

Patent

active

053992300

ABSTRACT:
A compound semiconductor is etched by a step of substituting a composite element of a compound semiconductor with other element, thereby forming a compound layer on the surface of the compound semiconductor and a step of removing the compound layer from the surface. Etching depth is controlled not by etching time, but by the number of runs (repetitions) of the etching step, and thus can be precisely controlled.

REFERENCES:
patent: 4361461 (1982-11-01), Chang
patent: 4734152 (1988-03-01), Geis
patent: 4830705 (1989-05-01), Loewenstein
patent: 4994140 (1991-02-01), Kenzo
patent: 5034092 (1991-07-01), Lebby
patent: 5110765 (1992-05-01), Bilakanti
patent: 5145554 (1992-09-01), Seki
Hiroyuki "Atomic Layer Controlled Digital Etching of Silicon" Japanese Journal of Applied Physics vol. 29, No. 11, Nov. 1990 pp. 2648-2652.

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