Method and apparatus for etch rate uniformity control

Details Method and apparatus for etch rate uniformity control Method and apparatus for etch rate uniformity control

2006-01-31

2006-01-31

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S747000, C438S748000

Reexamination Certificate

active

06992014

ABSTRACT:
A method for controlling a process on a substrate. The method comprising: providing the substrate, the substrate having an upper surface, an opposite lower surface and an edge between the upper and lower surfaces; processing the upper surface of the substrate with a first fluid; directing a second fluid against a portion of the lower surface proximate to the edge of the substrate, wherein the second fluid flows adjacent to the edge of the substrate; and controlling the temperature of the second fluid in order to affect a processing of an edge region of the upper side of the substrate.

REFERENCES:
patent: 4903717 (1990-02-01), Sumnitsch
patent: 5213349 (1993-05-01), Elliott
patent: 5294778 (1994-03-01), Carman et al.
patent: 5320982 (1994-06-01), Tsubone et al.
patent: 5567267 (1996-10-01), Kazama et al.
patent: 5580607 (1996-12-01), Takekuma et al.
patent: 5636098 (1997-06-01), Salfelder et al.
patent: 5846375 (1998-12-01), Gilchrist et al.
patent: 6107608 (2000-08-01), Hayes
patent: 6274505 (2001-08-01), Ito et al.
patent: 6322626 (2001-11-01), Shirley
patent: 6586161 (2003-07-01), Futase et al.
patent: 6695922 (2004-02-01), Kitano et al.
patent: 2002/0050244 (2002-05-01), Engesser
patent: 11-6081 (1999-01-01), None

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