Static information storage and retrieval – Read/write circuit – Erase
Patent
1994-10-24
1996-01-30
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Erase
365185, G11C 1140
Patent
active
054885868
ABSTRACT:
An apparatus and method of erasing memory cells while preventing overerasure of the memory cells is disclosed. By applying a large voltage across the floating gate of the memory cells, charge is removed from the floating gate. Once sufficient charge is removed from the floating gates of the memory cells to render them erased, a stop transistor halts the erasure process, thus preventing the overerasure of memory cells.
REFERENCES:
patent: 5138576 (1992-08-01), Madurawe
patent: 5220533 (1993-06-01), Turner
Madurawe Raminda
Schmidt Dominik
Altera Corporation
Yoo Do Hyun
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