Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1999-12-06
2000-10-03
Le, Vu A.
Static information storage and retrieval
Read/write circuit
Differential sensing
365205, 365210, G11C 702
Patent
active
061282375
ABSTRACT:
A method and apparatus for reducing a peak current produced by the simultaneous activation of numerous sense amplifiers associated with an active word line, without reducing the speed of operation of the semiconductor memory device. A memory array includes word lines accessing memory cells and a tracking word line for sequentially activating the sense amplifiers connected to the digit lines by introducing a delay after the activation of each sense amplifier or group of sense amplifiers and before activating the next sense amplifier or group of sense amplifiers, so that the total time for activation of the sense amplifiers for all digit lines associated with an active word line is spread out, but is not longer than the time necessary for activation of an entire word line.
REFERENCES:
patent: 4926382 (1990-05-01), Sakui et al.
Daeje Chin et al., "An Experimental 16Mb DRAM with Reduced Peak-Current Noise," Samsung Electronics Co., Ltd., Semiconductor Business R&D Center, Kyungki-do, Korea.
Cowles Timothy B.
Shirley Brian
Le Vu A.
Micro)n Technology, Inc.
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