Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-03-29
2005-03-29
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000, C365S189110
Reexamination Certificate
active
06873559
ABSTRACT:
A differential sensing circuit and sensing method for use in a low voltage memory device. The sensing circuit includes a cross-coupled sensing circuit for coupling with a memory element, a pull-up circuit and a multistage pull-down circuit. The multistage pull-down circuit accelerates the latching process of the cross-coupled sensing circuit by briefly pulling the cross-coupled sensing circuit to a potential below ground in order to increase the gate potential differential on at least a portion of the transistors within the cross-coupled sensing circuit. Once the latching transitions have commenced at an acceptable rate, the below-ground potential is removed and the traditional logic level pull-up and ground-potential pull-down circuits are activated.
REFERENCES:
patent: 4669063 (1987-05-01), Kirsch
patent: 4692642 (1987-09-01), Fukuzo et al.
patent: 4694205 (1987-09-01), Shu et al.
patent: 4855628 (1989-08-01), Jun
patent: 5042011 (1991-08-01), Casper et al.
patent: 5245578 (1993-09-01), McLaury
patent: 5438543 (1995-08-01), Yoon
patent: 5544110 (1996-08-01), Yuh
patent: 5614856 (1997-03-01), Wilson et al.
patent: 5638333 (1997-06-01), Lee
patent: 5646899 (1997-07-01), Jang et al.
patent: 6157586 (2000-12-01), Ooishi
patent: 6320798 (2001-11-01), Jo et al.
patent: 6477100 (2002-11-01), Takemura et al.
patent: 6522593 (2003-02-01), Kim et al.
Nobutaro Shibata, “Current Sense Amplifiers for Low-Voltage Memories”, IEICE Trans. Electron., Aug. 1997, pp. 1120-1130, vol. E79-C, No. 8.
Auduong Gene N.
Micro)n Technology, Inc.
TraskBritt
LandOfFree
Method and apparatus for enhanced sensing of low voltage memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for enhanced sensing of low voltage memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for enhanced sensing of low voltage memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3455738