Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2005-01-18
2005-01-18
Goudreau, George A. (Department: 1763)
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
C216S085000, C216S086000, C438S009000, C438S014000, C156S345230, C156S345280, C156S345400
Reexamination Certificate
active
06843927
ABSTRACT:
Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.
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“End-point detection using absorbed current, secondary electron, and secondary ion signals during milling of multilayer structures by focused ion beam”, Journal of Vacuum Science and Technology B,Mar. 1993', vol. 11, No. 2, pp. 263-267,img id="CUSTOM-CHARACTER-00001" he="2.79mm" wi="4.23mm" file="US06843927-20050118-P00701.TIF" alt="custom character" img-content="character" img-format="tif" ?img id="CUSTOM-CHARACTER-00002" he="2.79mm" wi="4.23mm" file="US06843927-20050118-P00701.TIF" alt="custom character" img-content="character" img-format="tif" ?Davies et. al.
Beyer Weaver & Thomas LLP
Goudreau George A.
KLA-Tencor Technologies Corporation
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