Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-07-07
2008-09-09
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C438S714000, C438S729000, C257SE21583, C257SE21304, C216S083000
Reexamination Certificate
active
07422982
ABSTRACT:
A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.
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Diao Jie
Karuppiah Lakshmanan
Tsai Stan D.
Wang You
Applied Materials Inc.
Lindsay Jr. Walter L.
Patterson & Sheridan
Pompey Ron E
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