Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-02-21
2000-05-16
Gulakowski, Randy
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438733, H01L 21302
Patent
active
060637102
ABSTRACT:
A method of dry etching treatment capable of attaining both high selectivity and fine fabrication at a high accuracy simultaneously is provided, in which an etching treatment comprising a plurality of steps are applied to a specimen W in one identical processing apparatus, and the temperature of the specimen is changed between etching of one step and etching of another step succeeding thereto, among the plurality of the steps, thereby applying etching at temperatures different between the one step and the step succeeding thereto.
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Hirano Shinsuke
Jozaki Tomohide
Kadomura Shingo
Alanko Anita
Gulakowski Randy
Sony Corporation
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