Method and apparatus for dry-etching half-tone phase-shift...

Details Method and apparatus for dry-etching half-tone phase-shift... Method and apparatus for dry-etching half-tone phase-shift...

2006-02-21

2006-02-21

Kornakov, M. (Department: 1746)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S056000, C430S312000, C430S313000, C430S314000, C216S063000, C216S067000, C216S068000, C216S069000, C216S070000, C216S075000

Reexamination Certificate

active

07001698

ABSTRACT:
A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, developing, etching said photomask blank and removing said resist layer. Patterns for transferring onto a wafer are formed on the photomask blank by a dry-etching method comprising dry-etching a chromium-containing half-tone phase-shift film utilizing etching gas comprised of mixed gas including (a) reactive ion etching gas, containing an oxygen-containing gas and a halogen-containing gas, and (b) reducing gas added to the gas component (a).

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patent: 2765065 (1998-04-01), None

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