Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-06-20
2006-06-20
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07063922
ABSTRACT:
A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
REFERENCES:
patent: 3923568 (1975-12-01), Bersin
patent: 3951709 (1976-04-01), Jacob
patent: 4203800 (1980-05-01), Kitcher et al.
patent: 5340684 (1994-08-01), Hayase et al.
patent: 5629114 (1997-05-01), Isao et al.
patent: 6-230557 (1994-08-01), None
patent: 6-347996 (1994-12-01), None
patent: 7-140635 (1995-06-01), None
patent: 2765065 (1998-04-01), None
Aoyama Satoshi
Harashima Noriyuki
Sakamoto Shouichi
Sasaki Takaei
Arent & Fox PLLC
Mitsubishi Denki & Kabushiki Kaisha
Rosasco S.
Ulvac Coating Corporation
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