Method and apparatus for dry etching

Details Method and apparatus for dry etching Method and apparatus for dry etching

2006-07-04

2006-07-04

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C156S345100, C216S067000, C216S074000, C438S719000, C438S720000, C438S721000, C438S724000

Reexamination Certificate

active

07071114

ABSTRACT:
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

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