Method and apparatus for dry etching

Details Method and apparatus for dry etching Method and apparatus for dry etching

1998-04-21

1999-12-28

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 156345, H01L 2100, B44C 122, C23F 102

Patent

active

060081333

ABSTRACT:
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

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