Method and apparatus for dry etching

Details Method and apparatus for dry etching Method and apparatus for dry etching

1997-05-22

1998-08-18

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 438713, 438719, H01L 2100

Patent

active

057958327

ABSTRACT:
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

REFERENCES:
patent: 4339326 (1982-07-01), Hirose et al.
patent: 4417947 (1983-11-01), Pan
patent: 4462863 (1984-07-01), Nishimatsu et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4943344 (1990-07-01), Tachi et al.
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 4986877 (1991-01-01), Tachi et al.
patent: 5110408 (1992-05-01), Fuji et al.
patent: 5242536 (1993-09-01), Schoenborn
patent: 5242539 (1993-09-01), Kumihashi et al.
Abstract Nos. 26p-ZF-1, 26p-ZF-4, 28p-ZF-9, 51st Japan Society of Applied Physics Autumn Meeting, 1990, pp. 462-463.
Arikado et al, "Al Tapered Etching Technology Using 10 Torr Magnetron Discharge Reactive Ion Etching", Proceedings of Symposium on Dry Process, 1986, pp. 48-52.
Kimura et al, "Local Etched Profile Anomaly In ECR Plasma Etching", The Electrochemical Society Spring Meeting, 191, Extended Abstracts, 91-1, pp. 670-671.
K. Ono et al, "Plasma Chemical View of magnetron and Reactive Ion Etching of Si with CI", Japanese Journal of Applied Physics,vol. 29, No. 10, Oct. 1990, pp. 2229-2235.
C. Dominguez et al, "Analysis of the Low Pressure Gas Composition in the Etching of Silicon", Journal of the Electrochemical Society, vol. 134, No. 1, Jan. 1987, pp. 202-205.
M. Gross et al, "Modeling of Sloped Sidewalls Formed by Simultaneous Etching and Deposition", Journal of Vacuum Science & Technology: Part B, vol. 7, No. 3 May 1989, pp. 534-541.
S.C. McNevin, "Radio Frequency Plasma Etching of Si/Si02: Improvements Resulting form the Time Modulation of the Processing Gases", J. Vac. Sci. Technol., Part B, vol. 8 No. 6, 1990, pp. 1185-1191.
Patent Abstracts of Japan, Abstract of JP-A-2052428, vol. 14, No. 218 (E-925), May 9, 1990.
C. Takahashi et al, "An Electron Cyclotron Resonance Plasma Deposition Technique Employing Magnetron Mode Sputtering", J.Vac. Sci. Technol., Part A, vol. 6 No. 4, 1988, pp. 2348-2352.
S. Samukawa, "Perfect Selective, Highly Anisotropic, and High Rate ECR Plasma Etching for N + Poly-Si and WSix/Poly-Si", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, 1990, pp. 207-210.
D. widmann et al, "Technologie Hochintegrierter Schaltungen"(Halbleiter-Elektronik, Bd. 19), 1988, Springer-Veriag, Berlin, DE, pp. 193-207.
S.M. Sze, "VLSI Technology", 2nd Edition, 1988, McGraw-Hill Book Company, New York, pp. 212-220.
K. Tsujimoto et al, "High-Gas-Flow Rate Microwave Plasma Etching", Proceedings of Symposium on Dry Process, 1992, pp. 49-54.
K. Tsujimoto et al, "Novel Short-Gas-Residence-Time ECR Plasma Etching", Proceedings of the Third Electronics, Information and Systems Conference, pp. 125-128.

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