Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2005-12-29
2008-10-14
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S334000, C257S396000, C257S503000, C257SE21170, C257SE21532, C257SE21585
Reexamination Certificate
active
07436040
ABSTRACT:
A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via.
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patent: 6537097 (2003-03-01), Szu
patent: 7142395 (2006-11-01), Swanson et al.
T.C. Huang et al.; “Numerical Modeling and Characterization of the Stress Migration Behavior Upon Various 90 nanometer Cu/Low k Interconnects”; Jun. 2-4, 2003; 4 pages.
Derryl D. J. Allman et al.; “Method And Apparatus For Redirecting Void Diffusion Away From Vias In An Integrated Circuit Design”; Patent Application, 20 pages, Dec. 29, 2005.
Allman Derryl D. J.
Bhatt Hemanshu D.
Burke Peter Austin
Kwak Byung-Sung
May Charles E.
LSI Corporation
Nhu David
Whitesell Eric James
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