Method and apparatus for diagnosing fault in semiconductor...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S750010, C324S1540PB

Reexamination Certificate

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11038485

ABSTRACT:
An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

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patent: 10-135413 (1998-05-01), None
“Electron Microscope Q and A”.
Patent Abstracts of Japan (related to JP 10-135413).

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