Method and apparatus for determining the robustness of memory ce

Static information storage and retrieval – Read/write circuit – Noise suppression

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365200, 365201, G11C 1140

Patent

active

059826916

ABSTRACT:
Apparatus and methods for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes by measuring the charge Q.sub.c that flow through a node of an equivalent diode structure when the diode structure is impinged by a light pulse with energy equivalent to that of the alpha-particle and/or cosmic ray strikes. In one embodiment, the method includes the steps of producing a light pulse having a light pulse energy, the light pulse energy is at a first light pulse energy; applying the light pulse to the device at a predetermined location, the predetermined location having an area and a geometry; varying the light pulse energy to a second light pulse energy which generates a soft error; detecting soft errors in the device; providing a diode having the same area and geometry as the predetermined location; applying the light pulse with the second light pulse energy to the diode; and determining the amount of charges that flow through the diode. The present invention additionally provides inexpensive methods and apparatus that would accurately simulate an alpha-particle and/or cosmic ray strike in a predetermined area of a memory cell and for comparing different technologies and SRAM/DRAM designs by comparing this pulse energy needed to produce the soft error.

REFERENCES:
patent: 4417325 (1983-11-01), Harari
patent: 4506436 (1985-03-01), Blakeman, Jr. et al.
patent: 4912675 (1990-03-01), Blake et al.
patent: 5320975 (1994-06-01), Cederbaum et al.

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