Method and apparatus for determining generation lifetime of...

Details Method and apparatus for determining generation lifetime of... Method and apparatus for determining generation lifetime of...

2006-05-02

2006-05-02

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S017000, C438S014000

Reexamination Certificate

active

07037734

ABSTRACT:
To determine the generation lifetime of a pn junction of a semiconductor wafer, an elastically deformable, electrically conductive contact is caused to touch a surface of the semiconductor wafer over the pn junction. At least one reverse bias voltage is applied to the pn junction via the contact and a value of current flowing in the contact in response to the application of each reverse bias voltage is measured. The generation lifetime of the pn junction is then determined from a subset of the values of the reverse bias voltage and the corresponding values of measured current.

REFERENCES:
patent: 4122383 (1978-10-01), Frosch et al.

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