Method and apparatus for determining concentration of...

Details Method and apparatus for determining concentration of... Method and apparatus for determining concentration of...

2007-03-13

2007-03-13

Tang, Minh N. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S754120, C324S754120

Reexamination Certificate

active

10952130

ABSTRACT:
To determine a concentration of defects and/or impurities in a semiconductor wafer, a first value of current is caused to flow in the semiconductor wafer having a substrate of semiconducting material. The semiconductor wafer is exposed to a pulse of light whereupon electron-hole pairs generated in the semiconductor wafer in response to the light pulse cause the current to increase to a second value. After termination of the light pulse, the rate of change of the current from the second value toward the first value is determined. A concentration of defects and/or impurities in the semiconductor wafer is determined as a function of the rate of change.

REFERENCES:
patent: 5804980 (1998-09-01), Nikawa
patent: 5815002 (1998-09-01), Nikawa
patent: 6657454 (2003-12-01), Howland
patent: 6943578 (2005-09-01), Sanda et al.

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