Method and apparatus for detecting imminent end-point when etchi

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156643, 156345, H01L 21306

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active

051980720

ABSTRACT:
A method for detecting imminent end-point when plasma etching a dielectric layer of a substrate by monitoring the D.C. bias voltage of the cathode during the etching process. The D.C. bias voltage gives an indirect reading of the impedance of the substrate which changes appreciably just prior to etch-through of the dielectric layer. The plasma etching process is then terminated and a less damaging etch process is used to complete the etch-through of the dielectric layer. The apparatus of the present invention includes an A.C. blocking network coupled to the cathode, an A/D converter coupled to the blocking network and a digital signal analyzer coupled to the A/D converter. Plasma etching can be automatically terminated by the signal analyzer upon the detection of imminent end-point.

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VLSI Electronics Microstructure Science, vol. 8, 1984, "Plasma Processing for VLSI", editors Norman G. Einsbrush and Dale M. Brown, Academic Press, Inc., New York, N.Y.
Journal of Vacuum Science Technology, Mar./Apr. 16, 1979, pp. 385-387, "End-point determination of aluminum reactive ion etching by discharge impedance monitoring", K. Ukai and K. Hanazawa.

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