Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2007-11-20
2007-11-20
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S706000, C438S714000, C216S060000
Reexamination Certificate
active
10531468
ABSTRACT:
The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint signal by filtering the at least one endpoint signal, wherein the filtering comprises applying a Savitsky Golay filter (12) to the at least one endpoint signal; and determining (14) an endpoint of the etch process from the at least one filtered endpoint signal.
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Chen Kin-Chan
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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