Method and apparatus for depositing materials with tunable...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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Reexamination Certificate

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07371436

ABSTRACT:
A method and system for depositing a film with tunable optical and etch resistant properties on a substrate by plasma-enhanced chemical vapor deposition. A chamber has a plasma source and a substrate holder coupled to a RF source. A substrate is placed on the substrate holder. The TERA layer is deposited on the substrate. The amount of RF power provided by the RF source is selected such that the rate of deposition of at least one portion of the TERA layer is greater than when no RF power is applied the substrate holder.

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Andosca et al. (J.App. Phys. 72(3) Aug. 1, 1992 pp. 1126-1132).
Kudoh et al., “Directional Plasma CVD Technology for Sub-Quarter Micrometer Feature Size Multilevel Interconnection,” 1997 International Conference on Solid State Devices and Materials, Japan Society of Applied Physics (Hamamasu), p. 290-291, (Sep. 1997).
Andosca, R.G. et al., “Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition,” Journal of Applied Physics, vol. 72 (No. 3), p. 1126-1132, (Aug. 1, 1992).

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