Method and apparatus for depositing highly oriented and reflecti

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36446822, 36446823, 36446824, 36446826, 438723, 438784, 438699, 427 99, 427250, 42725511, 42725512, G06F 1700, G07F 1502

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060171448

ABSTRACT:
The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures T.sub.s, within a first lower range of temperatures .DELTA. T.sub.s, and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures T.sub.d, within a second higher range of temperatures .DELTA. T.sub.D, and deposition gas is introduced into the process zone. The deposition gas forms an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface that results from highly oriented, relatively large crystals that grow on the seeding layer.

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U.S. Patent Application entitled, "Blanket-Selective Deposition Using a Self-aligning Ultra-thin Nucleation Layer"; filed Mar. 5, 1996; Serial No. 08/611,108; Inventors: Guo, et al.; Attorney Docket No. 1269.

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