Method and apparatus for depositing an oxide film

Details Method and apparatus for depositing an oxide film Method and apparatus for depositing an oxide film

1993-03-26

1994-07-26

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419222, 20419223, 20429804, C23C 1434

Patent

active

053324820

ABSTRACT:
The specification discloses a method and apparatus for depositing an oxide film by ion-beam sputtering in which an oxide film is formed on the surface of a wafer by sputtering particles from a target toward the wafer and supplying ozone adjacent to the wafer to oxidize the particles that are close to the surface of the wafer.

REFERENCES:
patent: 4007103 (1977-02-01), Baker et al.
patent: 4108751 (1978-08-01), King
patent: 4142958 (1979-03-01), Wei et al.
patent: 4885070 (1989-12-01), Campbell et al.
patent: 4911809 (1990-03-01), Wort et al.
patent: 4965248 (1990-10-01), Poppe et al.

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