Method and apparatus for deposited film

Details Method and apparatus for deposited film Method and apparatus for deposited film

2005-08-09

2005-08-09

Beck, Shrive P. (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S570000, C427S255280

Reexamination Certificate

active

06926934

ABSTRACT:
In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.

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