Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-10-21
2000-12-12
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250358, H01J 3730
Patent
active
061602620
ABSTRACT:
A large-area ion beam having a one-directionally long section is generated in a magnetically shielded ion source. The ion beam is bent evenly to form a large center angle of about 90 degrees in the direction of the short side by a window/frame type magnet having a large gap and having left and right frames each wound with a plurality of coils. Then, the ion beam is made to pass through a slit plate having a one-directionally long opening so that unnecessary ions are removed. The ion beam is then radiated onto a subject which makes a translational motion in the direction of the short side of the beam.
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Aoki Masahiko
Tanjyo Masayasu
Anderson Bruce C.
Nissin Electric Co., LTD
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